IGN2729M200

The IGN2729M200 from Integra is an RF Power Transistor that operates from 2.7 to 2.9 GHz. It delivers 200 W of peak output power with a gain of more than 17 dB and has an efficiency of up to 70%. The transistor utilizes GaN-on-SiC HEMT technology, has a pulse width of 100 µs and a duty factor of 10%. It requires a DC supply of 50 V and has pre-matched input impedance. The transistor is available in a metal-based package with an epoxy-sealed ceramic lid for optimal thermal efficiency and is ideal for S-band radar system applications. It has an EAR99 export status.