IGN2729M400R2

The IGN2729M400R2 from Integra RF Power Devices is a GaN High-Electron-Mobility Transistor (HEMT) that operates from 2.7 to 2.9 GHz. It delivers a pulsed output power of 400 W with 18 dB of gain and has an efficiency of 63%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and has been 100% tested under pulse-width of 100µs @10%. It requires a DC supply of 50 V. The transistor is available in a metal-based package with an epoxy-sealed ceramic lid for optimal thermal efficiency that measures 0.405 x 0.805 x 0.179 inches. It is ideal for use in S-band radar systems.