Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Integra Technologies, Inc..
The IGN2729M400R2 from Integra RF Power Devices is a GaN High-Electron-Mobility Transistor (HEMT) that operates from 2.7 to 2.9 GHz. It delivers a pulsed output power of 400 W with 18 dB of gain and has an efficiency of 63%. This transistor is manufactured using a gallium-nitride (GaN) on silicon carbide (SiC) process and has been 100% tested under pulse-width of 100µs @10%. It requires a DC supply of 50 V. The transistor is available in a metal-based package with an epoxy-sealed ceramic lid for optimal thermal efficiency that measures 0.405 x 0.805 x 0.179 inches. It is ideal for use in S-band radar systems.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
