The IGN2931M2000 from Integra RF Power Devices is a GaN-on-SiC RF Power Transistor that operates from 2.9 to 3.1 GHz. It delivers a peak output power of more than 2000 W with a gain of 13.5 dB and a drain efficiency of 58%. This transistor has a pulse droop of -0.4 dB and an input return loss of 15 dB. It requires a DC supply of 100 V and consumes a DC drain current of less than 72 A. This transistor is available in a metal-based flanged package that measures 27.31 x 21.47 x 4.45 mm with an epoxy-sealed ceramic lid for optimal thermal efficiency. It is ideal for S-band radar applications.
