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IGN3135M250

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The IGN3135M250 from Integra Technologies, Inc. is a RF Transistor with Frequency 3.1 to 3.5 GHz, Power 53.89 to 54.07 dBm, Power(W) 255.27 W, Duty_Cycle 0.1, Gain 13.1 dB. Tags: Flanged. More details for IGN3135M250 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN3135M250
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    3.1 to 3.5 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    53.89 to 54.07 dBm
  • Power(W)
    255.27 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    13.1 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2.8 V
  • Input Power
    10.8 to 18 W
  • Quiescent Drain Current
    90 to 110 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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