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IGN5259M10

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The IGN5259M10 from Integra Technologies, Inc. is a RF Transistor with Frequency 5.2 to 5.9 GHz, Power 40 dBm, Power(W) 10 W, Duty_Cycle 0.1, Gain 12.5 dB. Tags: Flanged. More details for IGN5259M10 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IGN5259M10
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    5200 to 5900 MHz, 13 dB GaN Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    C Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    5.2 to 5.9 GHz
  • Power
    40 dBm
  • Power(W)
    10 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    12.5 dB
  • Power Gain (Gp)
    10.97 to 14.95 dB
  • Supply Voltage
    36 V
  • Threshold Voltage
    -4 V
  • Input Power
    0.32 to 0.80 W
  • Quiescent Drain Current
    10 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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