The IGT2731M130 from Integra Technologies is a S-Band pulsed power GaN Transistor that operates from 2.7 to 3.1 GHz. This depletion mode GaN Transistor provides 130 watts of pulsed power with a pulse width of 300us and duty cycle of 10%. It operates from a 50 V supply (requires a negative gate bias voltage and bias sequencing) and provides 13.5 dB of gain with a drain efficiency of 55%. It is matched to 50 ohms and is available in a sealed ceramic package. The transistor has been developed for S-Band radar applictions.
