IGT3135M135

The IGT3135M135 from Integra Technologies is an S-Band pulsed power GaN Transistor that operates from 3.1 to 3.5 GHz. This depletion-mode GaN Transistor provides 135 watts of pulsed power with a pulse width of 300us and a duty cycle of 10%. It operates from a 46 V supply (requires a negative gate bias voltage and bias sequencing) and provides 13.5 dB of gain with a drain efficiency of 55%. It is matched to 50 ohms and is available in a sealed ceramic package. The transistor has been developed for S-Band radar applications.