IGT5259CW25

The IGT5259CW25 from Integra Technologies is a fully-matched RF GaN on SiC power transistor that operates from 5 to 6 GHz. The transistor provides up to 25 watts of power and with a gain of 12 dB and efficiency of 48% at CW conditions. It requires a 36 V drain bias voltage and requires a negative gate voltage and bias sequencing. It can be used in C-Band radars and for general purpose CW applications.