The IGT5259L50 from Integra Technologies is a fully-matched, GaN-on-SiC HEMT that provides 50 W of peak pulsed output power while operating from 5 to 6 GHz. This transistor provides 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions. It is available in a RoHS-compatible metal/ceramic flange-mount package with gold metallization that measures 20.32 x 10.16 mm and is ideal for pulsed C-Band Radar applications. This device is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D.
