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The IGT5259M25 from Integra Technologies, Inc. is a RF Transistor with Frequency 5.2 to 5.9 GHz, Power 33.98 dBm, Power(W) 2.5 W, Duty_Cycle 0.1, Gain 13 dB. Tags: Flanged. More details for IGT5259M25 can be seen below.
2 kW GaN-on-SiC Power Transistor from 2.9 to 3.1 GHz
25 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
15 W GaN-on-SiC HEMT from DC to 8 GHz
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