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ILD1011L200HV

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The ILD1011L200HV from Integra Technologies, Inc. is a RF Transistor with Frequency 1.03 to 1.09 GHz, Power 53.01 to 56.02 dBm, Power(W) 399.94 W, Duty_Cycle 0.064, Gain 17 dB. Tags: Flanged. More details for ILD1011L200HV can be seen below.

Product Specifications

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Product Details

  • Part Number
    ILD1011L200HV
  • Manufacturer
    Integra Technologies, Inc.
  • Description
    1030 MHz, 17 dB LDMOS Transistor

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Avionics
  • Application
    L Band
  • CW/Pulse
    Pulse
  • Frequency
    1.03 to 1.09 GHz
  • Power
    53.01 to 56.02 dBm
  • Power(W)
    399.94 W
  • Pulsed Width
    ELM Mode S: 48 x (32µs ON)
  • Duty_Cycle
    0.064
  • Gain
    17 dB
  • Power Gain (Gp)
    16 to 19 dB
  • Supply Voltage
    50 V
  • Input Power
    5 W
  • Breakdown Voltage - Drain-Source
    90 V
  • Voltage - Gate-Source (Vgs)
    2.5 to 5 V
  • Quiescent Drain Current
    100 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • Operating Temperature
    -55 to 200 Degree C
  • Storage Temperature
    -55 to 150 Degree C

Technical Documents
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