The CG2H30070 from MACOM is a 70 W RF Power GaN HEMT that operates from 0.5 to 3 GHz. This internally matched gallium nitride transistor provides a gain of up to 11.4 dB and requires a 28 volt rail. It is available in a flange package and is an ideal general purpose, broadband solution for a variety of RF and microwave applications.
