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CGH09120F

RF Transistor by MACOM (309 more products)
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The CGH09120F from MACOM is a RF Transistor with Frequency VHF to 2.5 GHz, Power 50.79 dBm, Power(W) 119.95 W, Duty_Cycle 0.05, Small Signal Gain 20 to 21.5 dB. Tags: Flanged. More details for CGH09120F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CGH09120F
  • Manufacturer
    MACOM
  • Description
    120-W, UHF to 2.5-GHz, GaN HEMT for WCDMA, LTE, MC-GSM

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    3G / WCDMA, WiMax, 4G / LTE
  • CW/Pulse
    CW
  • Frequency
    VHF to 2.5 GHz
  • Power
    50.79 dBm
  • Power(W)
    119.95 W
  • Pulsed Width
    40 us
  • Duty_Cycle
    0.05
  • Small Signal Gain
    20 to 21.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Efficiency
    0.75
  • Drain Current
    1.2 A
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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