CGH27030

RF Transistor by MACOM (309 more products)

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CGH27030 Image

The CGH27030 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 0 to 3000 MHz and can provide an output power of up to 30 W. GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.

Product Specifications

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Product Details

  • Part Number
    CGH27030
  • Manufacturer
    MACOM
  • Description
    30 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Wireless Communication
  • Application
    WiMax, VHF
  • CW/Pulse
    Pulse
  • Frequency
    VHF to 3 GHz
  • Power
    36.02 dBm
  • Power(W)
    4 W
  • Peak Output Power
    30 W
  • Small Signal Gain
    12.5 to 14.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    120 V
  • Drain Current
    150 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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