TheCGH55015F2/P2 is a gallium nitride (GaN) high electron mobility RF Transistor (HEMT). It operates at a frequency between 4500 to 6000 MHz and a gain of 12 dB. This Gan Transistor can provide an output power of up to 10 W GaN has superior properties when compared to silicon or GaAs - It has a higher breakdown voltage, saturated electron drift velocity and thermal condicitivity. This transistor is available in the form of a bare die.
