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CGHV14250

RF Transistor by MACOM (309 more products)
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The CGHV14250 from MACOM is a GaN high electron mobility transistor(HEMT) ideally used for L-band radar amplifier applications. It operates from 1.2 to 1.4 GHz, can provide output power of 330 W, has a gain of 18 dB and a drain efficiency of 77%. The package options are ceramic/metal flange and pill package.

Product Specifications

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Product Details

  • Part Number
    CGHV14250
  • Manufacturer
    MACOM
  • Description
    250-W, 1200 to 1400-MHz, GaN HEMT for L-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    L Band, UHF, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    500 MHz to 1.6 GHz
  • Power
    54.39 to 55.19 dBm
  • Power(W)
    330.37 W
  • Pulsed Width
    500 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    18.2 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    500 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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