The CGHV1F025S from MACOM is a GaN HEMT that operates from DC to 15 GHz. The device can be used for L, S, C, X and Ku-Band amplifier applications. It provides an output power of 25 watts and a gain 11 dB, while operating from 8.9 to 9.6 GHz. The transistor operates on a 40 volt rail circuit and can be operated below 40V to as low as 20V VDD, maintaining high gain and efficiency. It is available in a 3 x 4 mm, surface mount, DFN package.