CGHV1F025S

RF Transistor by MACOM (309 more products)

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CGHV1F025S Image

The CGHV1F025S from MACOM is a GaN HEMT that operates from DC to 15 GHz. The device can be used for L, S, C, X and Ku-Band amplifier applications. It provides an output power of 25 watts and a gain 11 dB, while operating from 8.9 to 9.6 GHz. The transistor operates on a 40 volt rail circuit and can be operated below 40V to as low as 20V VDD, maintaining high gain and efficiency. It is available in a 3 x 4 mm, surface mount, DFN package.

Product Specifications

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Product Details

  • Part Number
    CGHV1F025S
  • Manufacturer
    MACOM
  • Description
    GaN HEMT for L, S, C, X, and Ku-Band Amplifier Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    General Purpose, L Band, S Band, C Band, X Band
  • CW/Pulse
    CW
  • Frequency
    DC to 15 GHz
  • Power
    45.1 dBm
  • Power(W)
    32.36 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    14 dB
  • VSWR
    10.00:1
  • Supply Voltage
    40 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Drain Efficiency
    0.53
  • Drain Current
    240 mA
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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