CGHV31500F

RF Transistor by MACOM (309 more products)

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CGHV31500F Image

The CGHV31500F from MACOM is a GaN HEMT that operates from 2700 MHz to 3100 MHz. It provides a saturated output power up to 600 Watts, has a power gain of 12.75 dB and efficiency of up to 60%. The transistor is available in a ceramic/metal flange package and is ideal for S-Band Radar Applications.

Product Specifications

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Product Details

  • Part Number
    CGHV31500F
  • Manufacturer
    MACOM
  • Description
    500-W, 2700 to 3100-MHz, 50-Ohm Input/Output-Matched GaN HEMT for S-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.7 to 3.1 GHz
  • Power
    56.75 to 57.99 dBm
  • Power(W)
    629.51 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    11.8 to 12.5 dB
  • VSWR
    5.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    500 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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