CGHV35060MP

RF Transistor by MACOM (309 more products)

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CGHV35060MP Image

The CGHV35060MP from MACOM is a GaN HEMT that operates from 2700 MHz to 3500 MHz. This transistor is available in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. This transistor provides an output power of over 75 Watts with a gain of more than 13.8 dB and efficiency of over 61% through the band. It is ideal for S Band Radars and LTE base stations.

Product Specifications

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Product Details

  • Part Number
    CGHV35060MP
  • Manufacturer
    MACOM
  • Description
    60-W, 2700 to 3500-MHz, 50-V, GaN HEMT for S-Band Radar and LTE Base Stations

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application
    Base Station, 4G / LTE, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    48.7 dBm
  • Power(W)
    74.13 W
  • Saturated Power
    48.7 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    14.3 to 16.3 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.35
  • Drain Current
    125 mA
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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