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The CGHV35060MP from MACOM is a GaN HEMT that operates from 2700 MHz to 3500 MHz. This transistor is available in a small 6.5mm x 4.4mm plastic surface mount (SMT) package. This transistor provides an output power of over 75 Watts with a gain of more than 13.8 dB and efficiency of over 61% through the band. It is ideal for S Band Radars and LTE base stations.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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