CGHV35400F

RF Transistor by MACOM (309 more products)

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CGHV35400F Image

The CGHV35400F from MACOM is a RF Transistor with Frequency 2.9 to 3.5 GHz, Power 56.13 to 57.28 dBm, Power(W) 534.56 W, Duty_Cycle 0.1, Small Signal Gain 10.1 to 11.3 dB. Tags: Flanged. More details for CGHV35400F can be seen below.

Product Specifications

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Product Details

  • Part Number
    CGHV35400F
  • Manufacturer
    MACOM
  • Description
    400-W, 2900 to 3500-MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    2.9 to 3.5 GHz
  • Power
    56.13 to 57.28 dBm
  • Power(W)
    534.56 W
  • Pulsed Width
    500 us
  • Duty_Cycle
    0.1
  • Small Signal Gain
    10.1 to 11.3 dB
  • VSWR
    5.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Efficiency
    0.6
  • Drain Current
    500 mA
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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