CGHV40050

RF Transistor by MACOM (309 more products)

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CGHV40050 Image

The CGHV40050 from MACOM is a GaN HEMT that operates from DC to 4 GHz. It provides a saturated output power of up to 77 Watts, has a small signal gain of 17.5 dB and efficiency of up to 60%. The transistor requires a 50 V supply. The device can be used for a range of applications from narrow band UHF, L and S Band as well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and pill package.

Product Specifications

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Product Details

  • Part Number
    CGHV40050
  • Manufacturer
    MACOM
  • Description
    50 W, DC - 4.0 GHz, 50 V, GaN HEMT

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Wireless Infrastructure
  • Application
    UHF, L Band, S Band
  • CW/Pulse
    Pulse
  • Frequency
    DC to 4 GHz
  • Power
    48.6 dBm
  • Power(W)
    72.44 W
  • Saturated Power
    48.4 to 48.6 dBm
  • Small Signal Gain
    15.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Current
    0.3 A
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

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