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The CGHV50200F from MACOM is HEMT GaN Transistors that operates from 4.4 to 5 GHz. This transistor has a saturated output power of 180 watts (200 W Peak Power) with a gain of 13 dB and PAE of 33%. It requires a 40 V supply and is matched to 50 ohms at the input and output. This GaN HEMT is ideal for C-Band SATCOM applications and is available in a ceramic/metal flange package.
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
800 W GaN Asymmetric Doherty Power Transistor from 600 to 1000 MHz
2.5 kW LDMOS Power Transistor from 1 to 400 MHz
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