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The CGHV50200F from MACOM is HEMT GaN Transistors that operates from 4.4 to 5 GHz. This transistor has a saturated output power of 180 watts (200 W Peak Power) with a gain of 13 dB and PAE of 33%. It requires a 40 V supply and is matched to 50 ohms at the input and output. This GaN HEMT is ideal for C-Band SATCOM applications and is available in a ceramic/metal flange package.
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
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