The CGHV60170D from MACOM is a GaN high electron mobility transistor (HEMT) that operates up to 6 GHz. It provides a gain of 18 dB, power of 170 Watts with a PAE of 65%. The transistor requires a 50 V supply for operation. It is available as a bare die in gel-pak container packages and can be used in broadband amplifiers, tactical and satellite communications applications.
