CMPA901A035F

RF Transistor by MACOM (309 more products)

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The CMPA901A035F from MACOM is an X-band GaN on SiC HEMT transistor that operates from 9 to 11 GHz. It provides an output power up to 35 W with a small signal gain of 31 dB and power gain of over 22.7 dB. It has an efficiency of 35% and requires a 28 V power supply. The transistor is designed specifically for high efficiency, high gain, and wide bandwidth capabilities and is available in a 10-lead ceramic/metal flange package that measures 25 x 9.9 mm. It is ideal for Military Radar, Marine Radar, Weather Radar, and Medical applications.

Product Specifications

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Product Details

  • Part Number
    CMPA901A035F
  • Manufacturer
    MACOM
  • Description
    35 W, 9 to 11 GHz GaN MMIC HEMT for Radar & CW Applications

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, ISM, Aerospace & Defence
  • Application
    Marine Radar, Medical, ISM Band
  • CW/Pulse
    CW, Pulse
  • Frequency
    9 to 11 GHz
  • Power
    45.44 dBm
  • Power(W)
    35 W
  • Small Signal Gain
    31 to 37 dB
  • Power Gain (Gp)
    22.7 to 23.7 dB
  • Input Return Loss
    5 dB
  • Supply Voltage
    28 V
  • Package Type
    Flanged
  • Storage Temperature
    40 to 150 Degrees C

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