GTVA107001EC-V1

RF Transistor by MACOM (309 more products)

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The GTVA107001EC-V1 from MACOM is a GaN on SiC HEMT that operates from 960 to 1215 MHz. It provides a peak output power of 890 W (P3dB) and a gain of 18 dB while operating from 50 V supply. This Pulsed/CW device has a pulse width 128 µs and duty cycle of 10%. It is available in a thermally-enhanced surface mount package with bolt-down flange and is ideal for avionics applications. The GTVA107001EC-V1 is capable of withstanding a 10:1 load mismatch (all phase angles) at 700 W peak power under pulse conditions: 50 V, 100 mA IDQ, 128 µs pulse width and 10% duty cycle.

Product Specifications

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Product Details

  • Part Number
    GTVA107001EC-V1
  • Manufacturer
    MACOM
  • Description
    890 W GaN on SiC HEMT from 960 to 1215 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Aerospace & Defence, Avionics
  • CW/Pulse
    CW, Pulse
  • Frequency
    960 to 1215 MHz
  • Power
    58.45 dBm
  • Power(W)
    700 W
  • Gain
    20 dB
  • Supply Voltage
    50 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Drain Leakage Current (Id)
    12 mA
  • Package Type
    Flanged
  • RoHS
    Yes

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