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GTVA262711FA

RF Transistor by MACOM (309 more products)
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The GTVA262711FA from MACOM is a RF Transistor with Frequency 2.62 to 2.69 GHz, Power 54.77 dBm (P3dB), Power(W) 300 W (P3dB), Duty_Cycle 10%, Gain 16 to 18 dB. Tags: Flanged. More details for GTVA262711FA can be seen below.

Product Specifications

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Product Details

  • Part Number
    GTVA262711FA
  • Manufacturer
    MACOM
  • Description
    Thermally-Enhanced High Power RF GaN on SiC HEMT from 2620 to 2690 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    3G / WCDMA, 5G, Cellular
  • CW/Pulse
    Pulse, CW
  • Frequency
    2.62 to 2.69 GHz
  • Power
    54.77 dBm (P3dB)
  • Power(W)
    300 W (P3dB)
  • CW Power
    70 W
  • Pulsed Width
    10 µs
  • Duty_Cycle
    10%
  • Gain
    16 to 18 dB
  • Efficiency
    62%
  • VSWR
    10.0:1
  • Class
    Class AB
  • Supply Voltage
    48 V
  • Threshold Voltage
    -3.8 to -2.3 V
  • Breakdown Voltage - Drain-Source
    150 V
  • Current
    320 mA
  • Drain Current
    12 A
  • Drain Leakage Current (Id)
    4.5 mA
  • Junction Temperature (Tj)
    225 Degree C
  • Thermal Resistance
    1 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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