MAGX-100027-015S0P

RF Transistor by MACOM (309 more products)

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MAGX-100027-015S0P Image

The MAGX-100027-015S0P from MACOM is a GaN-on-Silicon HEMT D-mode transistor that operates from DC to 2.7 GHz. It supports both CW and pulsed operation and delivers up to 44.3 dBm of output power with a gain of more than 20.7 dB. The amplifier has a drain efficiency of up to 78.3% and requires a 50 V supply voltage. It is available as a surface mount DFN package that measures 6 x 3 mm and is suitable for applications such as military radio communications, digital cellular infrastructure, radar, avionics, and test instrumentation.

Product Specifications

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Product Details

  • Part Number
    MAGX-100027-015S0P
  • Manufacturer
    MACOM
  • Description
    15 W GaN on Si Transistor from DC to 2.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si, GaN
  • Application Industry
    Radar, RF Energy, Avionics, Test & Measurement, Aerospace & Defence, Wireless Infrastructure
  • Application
    Cellular, Radar
  • CW/Pulse
    CW, Pulse
  • Frequency
    DC to 2.7 GHz
  • Power
    41.8 to 44.3 dBm
  • Power(W)
    15.13 to 26.91 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    10 %
  • Small Signal Gain
    17.6 dB
  • Power Gain (Gp)
    15.3 to 17.2 dB
  • Supply Voltage
    50 V
  • Threshold Voltage
    -2 V (Gate)
  • Current
    60 mA
  • Drain Current
    1.93 A
  • Drain Leakage Current (Id)
    3.3 mA
  • Gate Leakage Current (Ig)
    3.3 mA
  • Package Type
    Surface Mount
  • Package
    DFN
  • Dimension
    6 x 3 mm
  • RoHS
    Yes
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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