NPA1006

RF Transistor by MACOM (309 more products)

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NPA1006 Image

The NPA1006 from MACOM is a RF Transistor with Frequency 20 MHz to 1 GHz, Power 40.97 dBm, Power(W) 12.5 W, Saturated Power 42.9 dBm, Gain 12.5 to 14 dB. Tags: Surface Mount. More details for NPA1006 can be seen below.

Product Specifications

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Product Details

  • Part Number
    NPA1006
  • Manufacturer
    MACOM
  • Description
    20 MHz to 1 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si, GaN
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Test & Measurement, Broadcast
  • Application
    Mobile Radio, Communication System
  • CW/Pulse
    CW
  • Frequency
    20 MHz to 1 GHz
  • Power
    40.97 dBm
  • Power(W)
    12.5 W
  • Saturated Power
    42.9 dBm
  • Gain
    12.5 to 14 dB
  • Small Signal Gain
    15 dB
  • Power Added Effeciency
    57.5 to 62.4%
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.5 to -0.5 V
  • Impedance Zs
    50 Ohms
  • Package Type
    Surface Mount
  • Package
    6x5mm 8-lead PDFN
  • RoHS
    Yes

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