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NPT1010B

RF Transistor by MACOM (310 more products)
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The NPT1010B from MACOM is a RF Transistor with Frequency DC to 2 GHz, Power 50 dBm, Power(W) 100 W, P1dB 49 dBm, Gain 20 dB. Tags: Flanged. More details for NPT1010B can be seen below.

Product Specifications

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Product Details

  • Part Number
    NPT1010B
  • Manufacturer
    MACOM
  • Description
    Gallium Nitride 28V, 100W RF Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on Si, GaN
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Broadcast
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 2 GHz
  • Power
    50 dBm
  • Power(W)
    100 W
  • P1dB
    49 dBm
  • Gain
    20 dB
  • Small Signal Gain
    18.7 to 19.7 dB
  • Supply Voltage
    28 V
  • Threshold Voltage
    -2.3 to -1.3 V
  • Breakdown Voltage - Drain-Source
    100 V
  • Package Type
    Flanged
  • Package
    Flange Ceramic
  • RoHS
    Yes

Technical Documents
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