PXAE183708NB

RF Transistor by MACOM (309 more products)

Note : Your request will be directed to MACOM.

PXAE183708NB Image

The PXAE183708NB from MACOM is an LDMOS Field-Effect Transistor that operates from 1805 to 1880 MHz. It provides an output power (P1dB) of 320 Watts with a gain of 13.5 dB and a drain efficiency of 60 %. This pulsed device has a pulse width of 10 µs and a duty cycle of 10%. The transistor requires a 28 V supply and has integrated ESD protection circuitry. It is available in a thermally-enhanced surface-mount package with an earless flange and is ideal for use in multi-standard cellular power amplifier and telecom applications.

Product Specifications

View similar products

Product Details

  • Part Number
    PXAE183708NB
  • Manufacturer
    MACOM
  • Description
    320 Watt LDMOS Transistor from 1805 to 1880 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    3G / WCDMA, 5G, Cellular
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.805 to 1.88 GHz
  • Power
    55.05 dBm
  • Power(W)
    319.89 W
  • P1dB
    320 W
  • Peak Output Power
    315 W
  • OIP3
    160 to 430 W
  • Pulsed Width
    10 uS
  • Duty_Cycle
    10%
  • Gain
    13.5 to 16 dB
  • VSWR
    1.10:1
  • Class
    Class AB
  • Supply Voltage
    28 V
  • Breakdown Voltage - Drain-Source
    65 V
  • Drain Leakage Current (Id)
    1 to 10 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Junction Temperature (Tj)
    225 Degree C
  • On Resistance
    0.08 Ohms
  • Package Type
    Earless Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Operating Voltage : 1.5 to 3.3 V (Gate), Adjacent Channel Power Ratio : -29.5 to -25 dBc, Output PAR : 6.8 to 7.7 dB

Technical Documents