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Note : Your request will be directed to Microchip Technology.
The 2307 from Microchip Technology is a RF Transistor with Frequency DC to 2.3 GHz, Power 38.45 dBm, Power(W) 7 W, Power Gain (Gp) 8 dB, VSWR 30.00:1. Tags: 2-Hole Flanged. More details for 2307 can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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