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The 2N5179 from Microchip Technology is a RF Transistor with Frequency DC to 1.4 GHz, Power Gain (Gp) 20 dB, Noise Figure 4.5 dB, Supply Voltage 6 V, Output Capacitance 1 pF. Tags: Through Hole. More details for 2N5179 can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
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