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The 2N5179 from Microchip Technology is a RF Transistor with Frequency DC to 1.4 GHz, Power Gain (Gp) 20 dB, Noise Figure 4.5 dB, Supply Voltage 6 V, Output Capacitance 1 pF. Tags: Through Hole. More details for 2N5179 can be seen below.
16 W GaN-on-SiC Transistor from DC to 8 GHz
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
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