GAN_2700-3600MHz_300W

Note : Your request will be directed to Microchip Technology.

The GAN_2700-3600MHz_300W from Microchip Technology is a RF Transistor with Frequency 2700 to 2900 MHz, Power 54.77 dBm, Power(W) 300 W, Duty_Cycle 11%, Power Gain (Gp) 15.3 dB. Tags: Ceramic. More details for GAN_2700-3600MHz_300W can be seen below.

Product Specifications

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Product Details

  • Part Number
    GAN_2700-3600MHz_300W
  • Manufacturer
    Microchip Technology
  • Description
    300 W, GaN Transistor from 2700 to 2900 MHz

General Parameters

  • Technology
    GaN
  • Application Industry
    Radar
  • Application
    S Band, Radar
  • CW/Pulse
    CW
  • Frequency
    2700 to 2900 MHz
  • Power
    54.77 dBm
  • Power(W)
    300 W
  • Pulsed Width
    100 uSec
  • Duty_Cycle
    11%
  • Power Gain (Gp)
    15.3 dB
  • Efficiency
    58%
  • Supply Voltage
    50 V
  • Package Type
    Ceramic
  • Grade
    Commercial, Military