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  6. A2I20H060N

The A2I20H060N from NXP Semiconductors is a RF Transistor with Frequency 1.8 to 2.2 GHz, Power 40.79 dBm, Power(W) 11.99 W, Duty_Cycle 0.1, Power Gain (Gp) 27.5 to 30.9 dB. Tags: Flanged. More details for A2I20H060N can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2I20H060N
  • Manufacturer
    NXP Semiconductors
  • Description
    AIRFAST RF POWER LDMOS TRANSISTORS 1805-2170 MHz, 12 W AVG., 28 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure
  • Application
    Cellular, Base Station, 3G / WCDMA
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 to 2.2 GHz
  • Power
    40.79 dBm
  • Power(W)
    11.99 W
  • CW Power
    69 to 80 W
  • Pulsed Width
    10 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    27.5 to 30.9 dB
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    0.8 to 1.6 Vdc
  • Voltage - Gate-Source (Vgs)
    -0.5 to 10 Vdc
  • Drain Efficiency
    0.4379
  • Drain Current
    24 to 145 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.6 °C/W
  • Package Type
    Flanged
  • Package
    TO--270WB--15 PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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