The AFT27S006N 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. This LDMOS transistor provides a gain of 22.5 dB, a P1dB of 6 W, has an effeciency of 20.2% and requires a supply voltage of 28 V. It is available in a compact plastic package.
