The AFT27S010N 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 2700 MHz. This LDMOS transistor provides a gain of 21.7 dB, a P1dB of 10 W, has an effeciency of 20.6% and requires a supply voltage of 28 V. It is available in a compact plastic package.
