The AFV10700H from NXP is a 52 V LDMOS transistor that operates from 1030 to 1090 MHz and delivers an output power of 700 W with an efficiency of 58.5 % and a gain of 19.2 dB. It can be used over a wider frequency band from 960 to 1215 MHz with a reduced power level. The device can be used a single-ended or in a push-pull or quadrature configuration. It is available in a surface mount package and is ideal for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS-B transponders, DME and other complex pulse chains. This transistor is included in NXP's product longevity program with assured supply for a minimum of 15 years after launch.

Product Specifications

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Product Details

  • Part Number
    AFV10700H
  • Manufacturer
    NXP Semiconductors
  • Description
    700 W LDMOS RF Power Transistor from 1030 to 1090 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast, Radar, Wireless Infrastructure, Avionics
  • Application
    Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.03 to 1.09 GHz
  • Power
    58.45 dBm
  • Power(W)
    699.84 W
  • P1dB
    58.5 dBm
  • Peak Output Power
    250 W
  • Pulsed Power
    250 W
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Power Gain (Gp)
    18 to 21 dB
  • Input Return Loss
    -15 to -9 dB
  • VSWR
    20.00:1
  • Polarity
    N--Channel
  • Supply Voltage
    52 V
  • Threshold Voltage
    1.3 to 2.3 Vdc
  • Breakdown Voltage - Drain-Source
    105 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.585
  • Drain Current
    100 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.03 °C/W
  • Package Type
    Flanged
  • Package
    NI--780H--4L
  • RoHS
    Yes
  • Operating Temperature
    -55 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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