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  6. MMRF1006H

The MMRF1006H from NXP Semiconductors is a RF Transistor with Frequency 10 to 500 MHz, Power 53.01 dBm, Power(W) 199.99 W, P1dB 60 dBm, Duty_Cycle 0.2. Tags: Flanged. More details for MMRF1006H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMRF1006H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 10-500 MHz, 1000 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Aerospace & Defence, Radar
  • Application
    HF, VHF, UHF, Radar, Communication System
  • CW/Pulse
    Pulse
  • Frequency
    10 to 500 MHz
  • Power
    53.01 dBm
  • Power(W)
    199.99 W
  • CW Power
    200 W
  • P1dB
    60 dBm
  • Peak Output Power
    1000 W
  • Pulsed Power
    1000 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    19 to 22 dB
  • Input Return Loss
    -18 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 Vdc
  • Breakdown Voltage - Drain-Source
    120 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.64
  • Drain Current
    150 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.03 °C/W
  • Package Type
    Flanged
  • Package
    NI--1230H--4S
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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