Fill one form and get quotes for cable assemblies from multiple manufacturers
The MMRF1015GN from NXP Semiconductors is a RF Transistor with Frequency 1 MHz to 2 GHz, Power 40 dBm, Power(W) 10 W, P1dB 42.23 dBm, Power Gain (Gp) 17.5 to 20.5 dB. Tags: Flanged. More details for MMRF1015GN can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.