The MMRF1312H from NXP Semiconductors is a Pulsed Power LDMOS Transistor that operates from 900 to 1215 MHz. It delivers a peak output pulse power of up to 1200 W with a gain of 19.2 dB and an efficiency of more than 54%. This Class AB transistor provides a pulse width of 128 µs and has a duty cycle of 10%. It can be used in a single-ended, push-pull or quadrature configuration. The transistor has integrated ESD protection with greater negative voltage range for improved Class C operation and gate voltage pulsing. It requires a DC supply voltage of 52 V and consumes 100 mA of current.This n-channel enhancement-mode transistor is available in NI-1230H-4S (eared) or NI-1230S-4S (earless) packages in tape & reel format. It is ideal for pulsed power delivery in Air Traffic Control (ATC) systems; including ground-based secondary radars such as IFF interrogators or transponders; Distance Measuring Equipment (DME), and Tactical Air Navigation (TACAN) applications.
