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  6. MRF1535N

The MRF1535N from NXP Semiconductors is a RF Transistor with Frequency 520 MHz, Power 45.44 dBm, Power(W) 34.99 W, Power Gain (Gp) 13.5 dB, VSWR 20.00:1. Tags: Flanged. More details for MRF1535N can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF1535N
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 35 W, 12.5 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Wireless Infrastructure, Broadcast, Commercial
  • Application
    Mobile, FM
  • CW/Pulse
    CW
  • Frequency
    520 MHz
  • Power
    45.44 dBm
  • Power(W)
    34.99 W
  • Power Gain (Gp)
    13.5 dB
  • VSWR
    20.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    12.5 V
  • Threshold Voltage
    1 to 2.6 Vdc
  • Breakdown Voltage - Drain-Source
    60 V
  • Voltage - Gate-Source (Vgs)
    20 Vdc
  • Drain Efficiency
    0.55
  • Drain Current
    500 mA
  • Thermal Resistance
    0.9 °C/W
  • Package Type
    Flanged
  • Package
    CASE 1264A-03, STYLE 1 TO-272-6 PLASTIC
  • RoHS
    Yes
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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