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  6. MRF6VP2600H

The MRF6VP2600H from NXP Semiconductors is a RF Transistor with Frequency 2 to 500 MHz, Power 50.97 dBm, Power(W) 125.03 W, P1dB 53.3 dBm, Duty_Cycle 0.2. Tags: Flanged. More details for MRF6VP2600H can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRF6VP2600H
  • Manufacturer
    NXP Semiconductors
  • Description
    Lateral N-Channel Broadband RF Power MOSFET, 2-500 MHz, 600 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Broadcast, Commercial
  • Application
    ISM Band
  • CW/Pulse
    Pulse
  • Frequency
    2 to 500 MHz
  • Power
    50.97 dBm
  • Power(W)
    125.03 W
  • P1dB
    53.3 dBm
  • Peak Output Power
    600 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    24 to 27 dB
  • Input Return Loss
    -18 to -9 dB
  • VSWR
    10.00:1
  • Polarity
    N-Channel
  • Supply Voltage
    50 V
  • Threshold Voltage
    1 to 3 Vdc
  • Breakdown Voltage - Drain-Source
    110 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.285
  • Drain Current
    2600 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    0.2 °C/W
  • Package Type
    Flanged
  • Package
    CASE 375D--05, STYLE 1 NI--1230
  • RoHS
    Yes
  • Operating Temperature
    150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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