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  6. MRFE6VS25GN

The MRFE6VS25GN from NXP Semiconductors is a RF Transistor with Frequency 1.8 MHz to 2 GHz, Power 43.98 dBm, Power(W) 25 W, P1dB 44dBm, Duty_Cycle 0.2. Tags: Flanged. More details for MRFE6VS25GN can be seen below.

Product Specifications

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Product Details

  • Part Number
    MRFE6VS25GN
  • Manufacturer
    NXP Semiconductors
  • Description
    Wideband RF Power LDMOS Transistor, 1.8-2000 MHz, 25 W, 50 V

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Aerospace & Defence, Broadcast
  • Application
    ISM Band
  • CW/Pulse
    Pulse, CW
  • Frequency
    1.8 MHz to 2 GHz
  • Power
    43.98 dBm
  • Power(W)
    25 W
  • CW Power
    25 W
  • P1dB
    44dBm
  • Peak Output Power
    25 W
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.2
  • Power Gain (Gp)
    24 to 27 dB
  • Input Return Loss
    -16 to -10 dB
  • VSWR
    65.00:1
  • Supply Voltage
    50 V
  • Threshold Voltage
    1.5 to 2.5 Vdc
  • Breakdown Voltage - Drain-Source
    133 to 142 V
  • Voltage - Gate-Source (Vgs)
    -6 to 10 Vdc
  • Drain Efficiency
    0.7469
  • Drain Current
    10 mA
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.2 °C/W
  • Package Type
    Flanged
  • Package
    TO--270--2 GULL PLASTIC
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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