The MRFX1K80H is a 65 V LDMOS transistor that operates from 1.8 to 400 MHz. It delivers an output power of up to 1800 W CW with an efficiency of more than 64.9 % and a gain of over 22.8 dB. The device can be used single-ended or in a push-pull configuration and is also suitable for linear applications with appropriate biasing. It is available in a surface mount package and is ideal for high VSWR industrial, scientific and medical applications, radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. This transistor is included in NXP's product longevity program with assured supply for a minimum of 15 years after launch.

Product Specifications

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Product Details

  • Part Number
    MRFX1K80H
  • Manufacturer
    NXP Semiconductors
  • Description
    65 V LDMOS Transistor from 1.8 to 400 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    ISM, Aerospace & Defence, Radar, Wireless Infrastructure, Broadcast
  • Application
    ISM Band, Military, Medical, Industrial, Radar
  • CW/Pulse
    CW
  • Frequency
    1.8 to 400 MHz
  • Power
    62.55 dBm
  • Power(W)
    1800 W
  • Power Gain (Gp)
    24. to 25.1 dB
  • Input Return Loss
    -14.4 to -9 dB
  • Polarity
    N-Channel
  • Supply Voltage
    65 V
  • Breakdown Voltage - Drain-Source
    179 to 193 V
  • Input Capacitance
    760 pF
  • Output Capacitance
    203 pF
  • Package Type
    Flanged
  • Package
    NI-1230H-4S
  • RoHS
    Yes
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C

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