Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Polyfet RF Devices.
The SM706 from Polyfet RF Devices is a RF Transistor with Frequency 1 to 175 MHz, Power 51 dBm, Power(W) 135 W, Power Gain (Gp) 11 dB, VSWR 20.0:1. Tags: Flanged. More details for SM706 can be seen below.
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
400 W GaN Asymmetric Doherty Power Transistor from 2620 to 2690 MHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.