The QPD1006 from Qorvo is a GaN-on-SiC HEMT Transistor that operates from 1.2 to 1.4 GHz. It provides a CW output power of 313 Watts with a gain of 17.5 dB and a pulsed power of 468 Watts with a gain of 17.8 dB and has a drain efficiency of over 55%.
The device is internally matched to 50 ohms and is available in an industry-standard air cavity package. This RoHS-compliant GaN IMFET transistor is ideally suited for military and civilian radar applications and can support pulsed and CW operations.
