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QPD1008L

RF Transistor by Qorvo (103 more products)
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The QPD1008L from Qorvo is a RF Transistor with Frequency DC to 3.2 GHz, Power 50.97 dBm, Power(W) 125.03 W, Saturated Power 52 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for QPD1008L can be seen below.

Product Specifications

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Product Details

  • Part Number
    QPD1008L
  • Manufacturer
    Qorvo
  • Description
    DC to 3.2 GHz, 51 dBm Gan Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, Avionics, Broadcast
  • Application
    Military, Mobile Radio, Communication System, Test & Instrumentation, Jammers, Radar
  • CW/Pulse
    Pulse, CW
  • Frequency
    DC to 3.2 GHz
  • Power
    50.97 dBm
  • Power(W)
    125.03 W
  • Saturated Power
    52 dBm
  • Pulsed Width
    128 us
  • Duty_Cycle
    0.1
  • Gain
    17.5 dB
  • Supply Voltage
    12 to 55 V
  • Voltage - Gate-Source (Vgs)
    -2.8 V
  • Drain Bias Current
    260 mA
  • Quiescent Drain Current
    260 mA
  • Package Type
    Flanged
  • RoHS
    Yes

Technical Documents
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