QPD3800

RF Transistor by Qorvo (103 more products)

Note : Your request will be directed to Qorvo.

QPD3800 Image

The QPD3800 from Qorvo is a RF Transistor with Frequency 3.4 to 3.8 GHz, Power 49.29 dBm, Power(W) 84.92 W, Saturated Power 49.3 dBm, Duty_Cycle 0.1. Tags: Flanged. More details for QPD3800 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    QPD3800
  • Manufacturer
    Qorvo
  • Description
    3.4 to 3.8 GHz, HEMT Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application
    Macro Cells, Base Station, 3G / WCDMA, 4G / LTE
  • CW/Pulse
    Pulse
  • Frequency
    3.4 to 3.8 GHz
  • Power
    49.29 dBm
  • Power(W)
    84.92 W
  • Saturated Power
    49.3 dBm
  • Pulsed Width
    100 us
  • Duty_Cycle
    0.1
  • Gain
    21 dB
  • Supply Voltage
    48 V
  • Voltage - Gate-Source (Vgs)
    -2.7 V
  • Drain Efficiency
    0.7
  • Quiescent Drain Current
    180 mA
  • Package Type
    Flanged
  • Package
    Ceramic
  • RoHS
    Yes

Technical Documents