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T1G2028536-FL

RF Transistor by Qorvo (103 more products)
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The T1G2028536-FL from Qorvo is a RF Transistor with Frequency DC to 2 GHz, Power 54.55 dBm, Power(W) 285.1 W, Duty_Cycle 0.1, Gain 19 dB. Tags: Flanged. More details for T1G2028536-FL can be seen below.

Product Specifications

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Product Details

  • Part Number
    T1G2028536-FL
  • Manufacturer
    Qorvo
  • Description
    285 W, 36 V, DC to 2 GHz, Flanged Mount, GaN RF Power Transistor

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure, Radar, Aerospace & Defence, Test & Measurement, Avionics, Broadcast
  • Application
    Military, Communication System, Test & Instrumentation, Radio, GPS, Radar
  • CW/Pulse
    CW
  • Frequency
    DC to 2 GHz
  • Power
    54.55 dBm
  • Power(W)
    285.1 W
  • Pulsed Width
    300 us
  • Duty_Cycle
    0.1
  • Gain
    19 dB
  • Supply Voltage
    36 V
  • Voltage - Gate-Source (Vgs)
    -3 V
  • Drain Efficiency
    0.54
  • Quiescent Drain Current
    576 mA
  • Package Type
    Flanged
  • RoHS
    Yes

Technical Documents
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