The H004 from RFHIC is a GaN-on-SiC Transistor that operates from DC to 6 GHz. It delivers a saturated output power of 28 W with a gain of 18.7 dB and a drain efficiency of 32%. This transistor utilizes RFHIC’s OptiGaN GaN-on-SiC technology which is an ideal choice for using GaN technology without stretching the budget. It requires a DC supply of 48 V. This power transistor is available in a surface-mount package and is ideal for 4G, 4G LTE, and Open RAN applications.
